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Overview
SSC has focused its core, silicon platform to introduce the Company’s initial four power management products, led by its revolutionary Junction Barrier controlled Schottky field effect transistor (“JBSFET^TM”), a monolithic power MOSFET and Schottky diode solution for high-current, microprocessor and telecom power applications.    This product, along with SSC’s new, high performance standard power MOSFETs, enables dramatic power conversion improvements and makes it possible for notebooks, servers, portables and other electronic devices to dramatically advance speed, functionality and form factor. 

In addition, SSC’s technology combines its “super-linear”, power MOSFET structure (“SL-MOS”) with the benefits of its innovative packaging for high power RF products. The SL-MOS transistor architecture provides substantial advantages over the LDMOS used in RF base station PAs.  The SL-MOS has excelled over LDMOS devices in linearity, efficiency, ruggedness and drift benchmark tests.

Competitive Advantages
SSC’s innovative advances in power density and performance will enable customers to significantly exceed previous technological barriers in watts per cubic inch of power to reach critical industry milestones.   These improvements also mean more powerful, efficient equipment, which operates cooler and has longer lasting battery life without an increase in overall size. 

Primary performance advantages of the Company’s architecture include:

Power Management

• 300% faster switching speeds which improve efficiency, allow faster clock speeds and reduce the size of passive components and overall equipment size.   

• 200% lower on-resistance per unit area that allow manufacturers to place more components in the same unit area and utilize next generation processors for performance improvements.   

• Standard industry-wide accepted packages such as the S08, MLF, TSSOP, DPAK and TO220 packages allow for quick starts at targeted customers.

RF

• Ten times superior linearity of the devices large signal characteristics which results from drain current that increases in proportion to the gate voltage.  This benefit is extremely attractive for very linear, high power RF amplifiers.

• Smaller, lateral device dimensions that yield a quantum leap forward in device power density resulting in enhanced production yields.

• Enhanced stability by eliminating current drift problems with LDMOS products, thereby avoiding field adjustments of BTS PAs after deployment.

In addition, SSC’s silicon-based technology eliminates the heavy upfront costs normally associated with implementing compound semiconductor materials (e.g., Gallium Arsenide, Silicon Carbide and Gallium Nitride). When compared to these compound semiconductor materials, the silicon-based SL-MOS architecture is more reliable, able to be manufactured at multiple, existing foundries and available in high volume.